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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 32 2.0 0.1 UNIT V V A A W V s
Ths 25 C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.3 A
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
123
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 32 150 150 UNIT V V A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heat sink Junction to ambient in free air CONDITIONS TYP. MAX. 3.95 55 UNIT K/W K/W
March 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current
1
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 3.0 A; IB = 0.4 A IC = 3.0 A; IB = 0.4 A IC = 1.0 A; VCE = 2 V IC = 3.0 A; VCE = 2 V IC = 1.0 A; VCE = 2 V
MIN. 400 13 7.5 13 18 23
TYP. 0.8 21 11 -
MAX. 1.0 2.0 10.0 2.0 1.3 30 20 25 30
UNIT mA mA mA V V V
Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Gain bands2 (Acceptance limits) 1 2 3
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ts tf PARAMETER Switching times resistive load Turn-off storage time Turn-off fall time Switching times inductive load ts tf ts tf Turn-off storage time Turn-off fall time Turn-off storage time Turn-off fall time CONDITIONS ICon = 3.0 A; IBon = 0.3 A; -IBoff = 0.6 A TYP. 1.5 0.5 MAX. 2.0 0.8 UNIT s s
ICon = 3.0 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V ICon = 3.0 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V; Tj = 100 C
1.0 60 1.1 120
1.2 100 1.4 250
s ns s ns
1 Measured with half sine-wave voltage (curve tracer). 2 Gain Banding. Product is divided into 3 gain bands for matching purposes. The gain band is printed on the device. All devices within a device rail will be from the same gain band. However, a box may contain rails from more than one band. Band quantities are shown on the box label. It is not possible to order specific gain bands.
March 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
+ 50v 100-200R
IC
90 %
ICon
90 %
10 %
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
IB
ts ton toff IBon 10 % tr 30ns -IBoff
tf
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250 200
LC
IBon
100
LB T.U.T.
-VBB
0 VCE / V min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
March 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
VCEsat / V
IC/IB= 12 10 8
Tj = 25 C Tj = 125 C
0
20
40
60
80 100 Tmb / C
120
140
0.1
1 IC / A
10
Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Zth / (K/W) BU1706AX
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB
10
VBEsat / V 1.2 Tj = 25 C Tj = 125 C
0.5 1 0.2 0.1 0.05 0.02 P D 0.01 D=0 0.001 T 10u 100u 1m 10m 100m t/s 1 t
tp tp
1.1 1 0.9
0.1
D=
T
0.8 0.7
IC = 5A 3A 2A
1u
10
100
0.6 0 0.4 0.8 1.2 IB / A 1.6 2 2.4
Fig.8. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A IC/IB= 8 10 12 10
0.1 1 10
VCEsat / V
Tj = 25 C Tj = 125 C
Tj = 25 C Tj = 125 C
5A
3A
IC=2A
0.1
1 IB / A
10
Fig.9. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB
Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
March 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
h FE 100 5V
IC / A 6 5 4
1V
10
3 2
Tj = 25 C Tj = 125 C
1 0
1 0.01
0.1 IC / A
1
10
0
200
400
600
800
1000
VCE / V
Fig.13. Typical DC current gain. hFE = f(IC) parameter VCE
IC / A 100
Fig.15. Reverse bias safe operating area. Tj Tj max
VCC
= 0.01 ICMmax 10
LC
tp =
VCL
10 us ICmax 100 us 1
II
IBon
LB T.U.T.
-VBB
500 us
Fig.16. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 H; VCL 850 V; LB = 1 H
2 ms 10 ms DC
I
0.1
0.01 1 10 100 1000 VCE / V
Fig.14. Forward bias safe operating area. Tmb = 25C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
March 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
March 1996
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1996
7
Rev 1.000

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